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MEMS Sensor Packaging
Doug Sparks
Hanking Electronics LLC
www.hkmems.com
Author contact information:  sparskdr@hanking.com
MEMS Sensors Packaging
50 Shades of MEMS Packaging
Wafer to wafer bond sealing 
– vacuum and inert gasesKovar, Ge, Si soldered lids
CVD cavity sealing 
Getters
Cavity packages – plastic, ceramic, Kovar
Lead frames, panels
Wirebonding:  Al, Au, Cu
Chip coating‐ silicone, parylene, silicone oil
Plastic overmolding
Welded Kovar lids, stainless steel diaphragms 
Test & Calibration Integration 
Medical ApplicationsAutomotiveConsumer Electronics
Sterilization
Intrinsically Safe
TSV
Bumps
Shipping packages
Industrial‐Chemical Exposure, High Pressure
CSP
Wafer Thinning
Hermeticity
Reliability Testing
FEM
FDA
EMC
ESD
Sensor Applications & Specification…
and how this affects the package design
Temperature Operating Range
Chemical or Fluid Exposure?
Pressure or Flow Rate Range
Mechanical‐ Shock & Vibration
Electrical‐ EMC, ESD, Power Requirement
Package Size
Package Material Constraints 
TCE, Modulus, Fracture Toughness, 
Melting Points/Eutectics,  Creep, Corrosion, 
Embrittlement, Adhesion Loss, Acoustic Loss, 
Cost
FEM‐ MEMS Packaging
TCE‐Young’s Modulus tradeoff, operating temperature range & 
materials, fluid interactions, turbulence, EMC, pressure, load, 
resonant frequencies, damping
COMSOL
FEM‐Feedback from real 
world great for improving 
existing products via package 
design changes
Fluid Exposure & Corrosion
‐ Corrosive gases and liquids/condensates can attack metal runners (Al). Silicone gels  
and parylene offer some protection.
‐ Rapid decompression of air saturated gels can lift wires due to gas bubble expansion
Backside sense silicon packages (Freescale, Merit, First Sensor…) have been 
employed to reduce these problems, however epoxy and solder used for die 
attach can also be chemically attacked and detach under high pressure.
Corrosion of Metallization
Burst Pressure‐ Si Low Fracture Toughness
The diaphragms should be able to handle 3X to 10X the operating pressure 
without bursting
Pressure snubbers are used with silicon pressure sensors to prevent the fracture of 
diaphragms due to water hammer and other gas/liquid mixtures like steam and natural gas.
Seal Diaphragms also built into industrial pressure meters
Drop test, mechanical shock also affected by low fracture toughness
Levels of MEMS Packaging
Wafer Level – metallization and passivation selection, bond pads, TSV
Chip Scale Packaging – Wafer bonding, CVD sealing, TSV, interposer, ASIC
Subpackage‐ plastic, ceramic, metal, panel, overmolding, gel, parylene
System Housing – electrical, fluid interconnects
Shipping Container – avoid damage
MEMS Packaging Development Stages
Lab Cerdip
TO
Plastic
CSP
& Historical
Vacuum Sensor
(Pirani Gauge)
Au-Sn (Eutectic)
Solder
Kovar Cap
Solder Sealed Kovar/Ceramic Vacuum Package
Ceramic Package
Dense
Glass
Vacuum Sensor
(Pirani Gauge)
Cap
TO Can
Projection
Weld
Feedthrough
Pins
Welded Kovar Lid under Vacuum – IR Filter Lids
Welded Metal Lids
Glass Sealed
Feedthroughs
Wafer Level Packaging
Top Cap Wafer
getter
MEMS Wafer
MEMS/Micromachined Element Metal Cross Under
Bond Pad Opening
Bond Pad
Seal Ring
Vacuum Cavity
wire
Wafer to Wafer Alignment
not just bonding
Types of Wafer Bonding & Temperatures
Si‐Si Fusion 
Glass Reflow/Frit
Eutectic Ge‐Al
Cu‐Cu & Au‐Au Thermocompression
Anodic
Eutectic Au‐Si
Solder & TLP  Au‐Sn, Cu‐Sn
Si‐Si Direct plasma act.
Adhesive/SU‐8
0     100 200      300 400 500 600 700      800      900      1000    1100
Bond Temperature ( ⁰C)
WLP
Even a well bonded Si 
to Si or Glass to Si 
interface may have 
tiny areas that are not 
bonded‐
microscratches, pits.  
Reflowed glass or solder should do a better job of sealing over surface micro roughness
Si‐Si or Si‐Glass Wafer Surface Roughness
Problems: particles, scratches, flatness
Goselle & Tong 1999
Voids Due to Particles
Si‐Si Voids after fusion bonding
Ultrasonic and IR void mapping can 
find voids in Si‐Si and Si‐Glass 
interfaces due to particles.  If dense 
enough they could provide a path 
for gas movement at the bonding 
interface.
Wafer cleaning, chemical purity improvements and modern bonding cluster tools 
can greatly reduce this class of interface defects and potential source of 
hermeticity loss. 
Anodic Bonding‐ Particles
Anodic bonding has an 
electrostatic force that will bond 
a wafer in spite of particles.  The 
rigged surfaces are sensitive to 
particles and scratches, but  not 
as bad a Si‐Si direct bond which 
has a weaker attractive force.
Glass Voids
Carbon Rich Regions
C + O2  CO2
C + 2PbO  CO2 + 2Pb
Burn out step must eliminate 
all carbon from the acrylic 
paste.
If not bubbles can form during 
reflow as CO2/CO is formed in 
the glass.  PbO reduction from 
Si and C reactions can produce 
gas
Frit Voids
Cavity
Reflow Glass Bonding
Metallic Sealing‐ Eutectics for Lower
Temperature Sealing
Transient Liquid Phase Eutectic Bonding‐
Higher Operational Temperatures
TLP wafer bonding uses a thin lower melting point wafer to wafer 
interface
Metal melting allows for lower bonding force and can cover surface 
irregularities 
Once the layers intermix and pure metals and the eutectic phase are 
consumed the operational temperature that the bonded wafer and 
then chips can see is higher than this initial melting temperature
Melt Temperatures  200 ⁰C (180‐300⁰C  ) Example Gold‐Indium
Remelt Temperatures > 400⁰C (300‐800 ⁰C)
Zoomed Image (Quarter Wafer P)
Page 15 of 19
Job#: 3073‐IL15
Metal‐ Solder/Eutectic Seals can also have 
microvoids at the bonding interface
Ultrasound
Image
Intermetallic
Wetting problems
Oxidation
Particles
Kirkendall Voiding of Metallic Alloys
Even in a particle free fab 
with planar sealing surfaces, 
voids can appear in metal 
alloy interfaces.
Intermetallics can also lead 
to bond failures
CVD MEMS Vacuum Sealing
CVD seal MEMS resonators and reference vacuum 
cavities with CVD poly‐silicon, oxide and nitride.
Kim et al Stanford Transducers 2008
Thinner vacuum sealed 
MEMS chips
Can be CMOS integrated but 
this can increase wafer 
process complexity.
Vacuum Packaging – Getters
Atmosphere Control
Gas Desorption of Microcavity Surfaces
Reversible changes in Q and zero offset in absolute pressure sensors have been observed
1100
1150
1200
1250
1300
1350
0 500 1000
Q
Time (hours)
Q Versus Time 100C/5V
Early MEMS gyro resonator reliability testing showed reversible Q changes over temperature.
Sensors and Actuators A, 95 (1), pp.61‐68,  (2001)
Q versus Pressure in a Vacuum
Chamber with a Decapped Resonator
0
2000
4000
6000
8000
10000
12000
0 50 100
Pressure (mTorr)
Q
Chip‐Scale Vacuum Package
Silicon on Glass Chip Stack
Improved Vacuum Performance – High Q Resonators
Using the Thin‐Film Getter Process/Design
With no getter – the average Q value is 36,
Q-Plot Silicon Tube Resonator with
NanoGetters
-30
-25
-20
-15
-10
-5
0
16354 16355 16356 16357 16358
Frequency (Hz)
Gain(db)
Q=61,700
D.Sparks et al, Hilton Head, SC  p.75, 2004
Getter and Wafer Bonding Process
Sparks et al, IEEE Transactions on Advanced 
Packaging, Vol. 26,No. 3, August 2003
Ceramic & Metal Package Integration
Getters can be selectively deposited on Kovar, Si, steel, glass,
sapphire or Ge lids for resonators, pressure sensors, optical and
tunneling devices.
Thin film getter
on a Kovar
lid
Getter on Steel Lids
May need an activation
step with welded lids.
Backend Process‐ MEMS Wafer Saw Options
Diamond Blade Si slurry – wirebond
problems, sensing element fouling
Stealth‐ internal voids‐ must break apart 
chips
Plasma‐ rounded corners, must remove 
metal films from saw street‐ great for 
thinning small chips – pressure 
microphones.
Diamond Blade, Stealth Laser, Plasma‐DRIE
Si Slurry on Al
Backend Process: Wire Bonding & Passivation
Wire Material
Aluminum, Gold, Trend‐ Copper, Alloys
Forming gas – high bond force damage
Wire Gel Coating‐ corrosion & shorts prevention
Low loop heights for thin packages
Moving from 1‐2 chips per package to Combos
Combo Packages‐ stacked chips‐ gyros, accelerometers, e‐compass, pressure
Major MEMS Package Applications
in order of the environmental challenge
• Industrial
• Automotive
• Medical
• Consumer
Media Compatible Options 
Industrial Pressure
• Corrugated Steel Diaphragms, Oil Filled Packages
• Silicon Bonded to Steel
• Backside Si Sense
Trade‐offs – Cost , Size, Accuracy, Corrosion, 
Over Pressure & Water Hammer Burst
Metal Diaphragms‐Oil Fill Pressure Sensor
Welded Corrugated
Steel Diaphragms
MEMS Frontside sense
CVD PolySi Bridge on Stainless Steel 
Pressure Sensor
Nagano Pressure Sensor
CVD Fabrication Process
Media Contacts Steel‐ unique MEMS on steel process and fab
Zhang et al,  JMM 201
Si Strain Gauge On Stainless Steel‐
Glass Reflow AttachmentLow Sensitivity, Media contact 
with stainless steel
MEMS Pressure Media Compatible
Higher Sensitivity
Lower hysteresis
Smaller die size‐ cheaper that NKS polySi
process
Do coat the bottom of the Si diaphragm with 
gold‐ for chemicals that etch Si (hot caustic)
Au‐Sn eutectic die attach‐ to ceramic (17‐4?)
Top side motion stop
Can still have a burst pressure problems that 
steel diaphragms do not have
Merit Sensors, SMI, Freescale
Fluid
Merit’s ‐ Media Compatible MEMS
• Integrated temperature sensing capability
• Back-side media monitoring protects
electronic circuitry from harsh media
• <1% total accuracy
• Wide operating temp. range (-40° to 150°C)
• Pressure range to 500 psi (34.5 bar)
ceramic
Can we shrink all industrial MEMS‐based sensor?
SMT
CSP
Through Hole
Cable Connectors
Metal Sealed
?
Automotive Operating Environment
The wide operating temperature range, cost targets and EMC goals heavily influence 
package design for the automotive market
• Pressure
• Flow
• Angular Rate
• Acceleration
• Microphones
• Tilt
• Gas
MAP, MAP/T, TPMS, TURBO Packages
There are more than 100 different MAP, TMAP, MAPT‐ MEMS 
pressure sensor packaged for the automotive market.  Virtually 
every car manufacturer specifies a different housing, connector 
and attachment fixture.
Glass Filled PBT
Metal
Inserts
Automotive MEMS Flow Sensor Package
Flow rate range, coating of elements, particle 
impingement, resonance, bypass, turbulence
Automotive temperature range ‐40⁰C to 150⁰C
MAF – 2 part package
MEMS Chip
2 Part Package
Medical Pressure Sensor Packaging 
Merit Sensors
Applications drive the packaging‐ Blood pressure, respiration, catheters, implants
Implant‐ blood contact
tissue growth
Sterilization method‐ gamma ray, ETO, autoclave – can damage the MEMS sensor
Narrow temperature range often eliminates need for an ASIC
FDA Approval process – Class  II or Class III‐ implants
Corrosive –blood  salt water, biologic, tissue growth
BP‐ low cost application
Packaging for Consumer MEMS Sensors
Thin, low power, bumps, CHEAP!
Glass
Si CIS
Glass
Si to Si  Si to Si 
Si
1.5‐3mm
Industrial & Gen 1 Automotive
Current Automotive & Consumer
Pressure Sensors ‐ CIS
Temporary Bond & Debond, Thinning 
ProcessesDevice Wafer
Carrier Wafer
Coat with release agent
Temporary Adhesive
Bond
Thin Device Wafer
&
Other Processing
Debond Process
Clean Tape Frame Mounting
Singulate‐Dice Chips
• Solvent Release
• Thermal Slide
• Mechanical Peel
• Laser Assist
CMP
Through Silicon Vias‐ TSV
ChipScale Review Dec 2014
TSVs are being integrated into MEMS, such as capping wafers and 
Silicon Interposers‐ Need Wafer thinning, DRIE, trench fill.  
A Key Backend Process
TSV
&
TGV
Integrating Solder Bumps into MEMS
TSVs & DRIE are most often needed as well
KLA /Tencor 2015Also Au Bumps & Cu Pillars
Motion Sensors 
3D ICs
Automotive MEMS Motion Sensors
Pad
s
Consumer MEMS 2015+
Cap Wafer
Wirebond
Bumps
TSV
Cap
CMOS
100um
100‐300 um
500‐750um
500‐750um
3D IC Stack MEMS Metallic Bond & Bumps
What is a MEMS Process?  
DRIE Si Etch
HF Undercut
Wafer to Wafer Bonding
Wafer Thinning
A‐HF Tube Cleaning
HF Contact Etch
TSV Etch
Thin Power ICs
Thin CIS Stack
CIS Carrier Wafer
Plasma Poly‐Si Etch CMOS
3D IC Stack
Consumer Packaging Convergence
MEMS  ‐ CIS  ‐ 3D IC
DRIE, Wafer Bonding, Thinning, TSV, Bumps
WL‐CSP
Conclusion‐ MEMS Packaging
MEMS sensors packaging is quite diverse, depending on application
New packaging methods are being developed to shrink even 
industrial sensor  product
Package design depends on the science, cost, form factor and 
application
Consumer MEMS packages are converging with CIS and 3‐D ICs
Hanking Electronics MEMS Packaging Fab
Contact Hanking Electronics LLC for 
MEMS packaging services
Author; Doug Sparks
Email: sparksdr@hanking.com

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